Chemical-Mechanical polishing (CMP) is a critical process for achieving global wafer planarization in semiconductor manufacturing. chromium oxide green (Cr₂O₃), as a high-performance abrasive, demonstrates unique advantages in CMP processes for specific semiconductor materials.
CMP Process Principles
CMP is a precision machining technology combining chemical reaction and mechanical grinding:
- Chemical Action: Chemical components in polishing slurry react with wafer surface, forming softened layer
- Mechanical Action: Abrasive particles mechanically remove the softened layer
- Planarization Effect: Achieves global planarization meeting strict lithography flatness requirements
Advantages of chromium oxide green in CMP
Property Advantage Description Hardness Matching Mohs hardness 8-8.5, suitable for hard-brittle material polishing Chemical Stability Compatible with various polishing slurry systems Controllable Particle Size Nano-scale particle size enables atomic-level removal Contamination-Free High-purity product contains no metal impurities Cost-Effectiveness Significantly lower cost than diamond abrasives
Applicable Materials and Application Scenarios
Silicon Carbide (SiC) polishing: SiC is a core third-generation semiconductor material with high hardness and strong chemical inertness. Conventional abrasives struggle with efficient machining. Cr₂O₃-based CMP enables high-quality SiC surfaces.
Silicon Nitride (Si₃N₄) polishing: Research confirms Cr₂O₃ is an excellent polishing abrasive for Si₃N₄, achieving efficient material removal and superior surface quality due to hardness similarity.
Sapphire Wafers: For LED and power device sapphire substrates, Cr₂O₃ CMP is the key process for achieving nanometer-level surface roughness.
Process Parameter Optimization
Parameter Typical Range Impact Abrasive Concentration 1-10 wt% Material removal rate polishing Pressure 1-5 psi Removal rate/surface quality Platen Rotation Speed 50-100 rpm Uniformity pH Value Acidic/Alkaline Chemical reaction rate Temperature 20-40°C Reaction kinetics
VerdeChrome® CMP Grade Products
We provide VerdeChrome® products specifically designed for semiconductor CMP:
- Nano-scale particle size (D50: 50-500nm customizable)
- Ultra-high purity (Cr₂O₃ ≥99.9%), metal impurities <10ppm
- Strict particle size distribution control, no large-particle scratching risk
- Optimized dispersibility for polishing slurry formulation
- Cleanroom packaging to prevent contamination
Contact our technical team for CMP application support.
